Effect of a large hole reservoir on the charge transport in TiO2/organic hybrid devices
Identifieur interne : 001D84 ( Main/Repository ); précédent : 001D83; suivant : 001D85Effect of a large hole reservoir on the charge transport in TiO2/organic hybrid devices
Auteurs : RBID : Pascal:12-0440144Descripteurs français
- Pascal (Inist)
- Réservoir, Phénomène transport, Oxyde de titane, Dispositif, Oxyde d'indium, Oxyde d'étain, Acide butyrique, Ester, Cuivre, Interface, Extraction, Equilibre, Charge espace, Phénomène transitoire, Méthode analytique, Réponse transitoire, Donnée expérimentale, Calcul, Blocage, Etude théorique, TiO2, O Ti.
- Wicri :
- concept : Cuivre.
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Abstract
We have fabricated hybrid devices in the form of indium tin oxide/titanium dioxide/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/copper (ITO/TiO2/P3HT:PCBM/Cu) to clarify the impact of the TiO2/P3HT:PCBM interface on the charge transport using the charge extraction by linearly increasing voltage (CELIV) technique. We found that a large equilibrium charge reservoir is accumulated at negative offsets at the TiO2/ P3HT:PCBM interface leading to space charge limited extraction current (SCLC) transients. We show analytically the SCLC transient response and compare the experimental data to calculated SCLC at a linearly increasing voltage. The theoretical calculations indicate that the large charge reservoir at negative offset voltages is due to thermally generated charges combined with poor hole extraction at the ITO/TiO2 contact, due to the hole blocking character of TiO2.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of a large hole reservoir on the charge transport in TiO<sub>2</sub>/organic hybrid devices</title><author><name sortKey="Sanden, Simon" uniqKey="Sanden S">Simon Sanden</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Natural Sciences, Physics and Center of Functional Materials, Åbo Akademi University, Porthansgatan 3</s1><s2>20500, Åbo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20500, Åbo</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba</s1><s2>Meguro-ku, Tokyo 153-8904</s2><s3>JPN</s3><sZ>1 aut.</sZ></inist:fA14><country>Japon</country><wicri:noRegion>Meguro-ku, Tokyo 153-8904</wicri:noRegion></affiliation></author><author><name sortKey="Sandberg, Oskar" uniqKey="Sandberg O">Oskar Sandberg</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Natural Sciences, Physics and Center of Functional Materials, Åbo Akademi University, Porthansgatan 3</s1><s2>20500, Åbo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20500, Åbo</wicri:noRegion></affiliation></author><author><name>QIAN XU</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Natural Sciences, Laboratory of Physical Chemistry and Center of Functional Materials, Åbo Akademi University, Porthansgatan 3</s1><s2>20500, Åbo</s2><s3>FIN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20500, Åbo</wicri:noRegion></affiliation></author><author><name sortKey="Smatt, Jan Henrik" uniqKey="Smatt J">Jan-Henrik Smatt</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Natural Sciences, Laboratory of Physical Chemistry and Center of Functional Materials, Åbo Akademi University, Porthansgatan 3</s1><s2>20500, Åbo</s2><s3>FIN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20500, Åbo</wicri:noRegion></affiliation></author><author><name sortKey="Juska, Gytis" uniqKey="Juska G">Gytis Juska</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Solid State Electronics, Vilnius University, Sauletekio 9</s1><s2>10222 Vilnius</s2><s3>LTU</s3><sZ>5 aut.</sZ></inist:fA14><country>Lituanie</country><wicri:noRegion>10222 Vilnius</wicri:noRegion></affiliation></author><author><name sortKey="Linden, Mika" uniqKey="Linden M">Mika Linden</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Natural Sciences, Laboratory of Physical Chemistry and Center of Functional Materials, Åbo Akademi University, Porthansgatan 3</s1><s2>20500, Åbo</s2><s3>FIN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20500, Åbo</wicri:noRegion></affiliation><affiliation wicri:level="4"><inist:fA14 i1="05"><s1>Institute of Inorganic Chemistry II, The University of Ulm, Albert-Einstein-Alle 11</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Bade-Wurtemberg</region><region type="district" nuts="2">District de Tübingen</region><settlement type="city">Ulm</settlement></placeName><orgName type="university">Université d'Ulm</orgName></affiliation></author><author><name sortKey="Osterbacka, Ronald" uniqKey="Osterbacka R">Ronald Österbacka</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Natural Sciences, Physics and Center of Functional Materials, Åbo Akademi University, Porthansgatan 3</s1><s2>20500, Åbo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Finlande</country><wicri:noRegion>20500, Åbo</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0440144</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0440144 INIST</idno><idno type="RBID">Pascal:12-0440144</idno><idno type="wicri:Area/Main/Corpus">001577</idno><idno type="wicri:Area/Main/Repository">001D84</idno></publicationStmt><seriesStmt><idno type="ISSN">1463-9076</idno><title level="j" type="abbreviated">PCCP, Phys. chem. chem. phys. : (Print)</title><title level="j" type="main">PCCP. Physical chemistry chemical physics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Analytical method</term><term>Blocking</term><term>Butyric acid</term><term>Calculation</term><term>Copper</term><term>Device</term><term>Equilibrium</term><term>Ester</term><term>Experimental data</term><term>Extraction</term><term>Indium oxide</term><term>Interface</term><term>Reservoir</term><term>Space charge</term><term>Theoretical study</term><term>Tin oxide</term><term>Titanium oxide</term><term>Transient response</term><term>Transients</term><term>Transport process</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Réservoir</term><term>Phénomène transport</term><term>Oxyde de titane</term><term>Dispositif</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Acide butyrique</term><term>Ester</term><term>Cuivre</term><term>Interface</term><term>Extraction</term><term>Equilibre</term><term>Charge espace</term><term>Phénomène transitoire</term><term>Méthode analytique</term><term>Réponse transitoire</term><term>Donnée expérimentale</term><term>Calcul</term><term>Blocage</term><term>Etude théorique</term><term>TiO2</term><term>O Ti</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have fabricated hybrid devices in the form of indium tin oxide/titanium dioxide/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/copper (ITO/TiO<sub>2</sub>/P3HT:PCBM/Cu) to clarify the impact of the TiO<sub>2</sub>/P3HT:PCBM interface on the charge transport using the charge extraction by linearly increasing voltage (CELIV) technique. We found that a large equilibrium charge reservoir is accumulated at negative offsets at the TiO<sub>2</sub>/ P3HT:PCBM interface leading to space charge limited extraction current (SCLC) transients. We show analytically the SCLC transient response and compare the experimental data to calculated SCLC at a linearly increasing voltage. The theoretical calculations indicate that the large charge reservoir at negative offset voltages is due to thermally generated charges combined with poor hole extraction at the ITO/TiO<sub>2</sub> contact, due to the hole blocking character of TiO<sub>2</sub>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1463-9076</s0></fA01><fA03 i2="1"><s0>PCCP, Phys. chem. chem. phys. : (Print)</s0></fA03><fA05><s2>14</s2></fA05><fA06><s2>41</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of a large hole reservoir on the charge transport in TiO<sub>2</sub>/organic hybrid devices</s1></fA08><fA11 i1="01" i2="1"><s1>SANDEN (Simon)</s1></fA11><fA11 i1="02" i2="1"><s1>SANDBERG (Oskar)</s1></fA11><fA11 i1="03" i2="1"><s1>QIAN XU</s1></fA11><fA11 i1="04" i2="1"><s1>SMATT (Jan-Henrik)</s1></fA11><fA11 i1="05" i2="1"><s1>JUSKA (Gytis)</s1></fA11><fA11 i1="06" i2="1"><s1>LINDEN (Mika)</s1></fA11><fA11 i1="07" i2="1"><s1>ÖSTERBACKA (Ronald)</s1></fA11><fA14 i1="01"><s1>Department of Natural Sciences, Physics and Center of Functional Materials, Åbo Akademi University, Porthansgatan 3</s1><s2>20500, Åbo</s2><s3>FIN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba</s1><s2>Meguro-ku, Tokyo 153-8904</s2><s3>JPN</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Natural Sciences, Laboratory of Physical Chemistry and Center of Functional Materials, Åbo Akademi University, Porthansgatan 3</s1><s2>20500, Åbo</s2><s3>FIN</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Solid State Electronics, Vilnius University, Sauletekio 9</s1><s2>10222 Vilnius</s2><s3>LTU</s3><sZ>5 aut.</sZ></fA14><fA14 i1="05"><s1>Institute of Inorganic Chemistry II, The University of Ulm, Albert-Einstein-Alle 11</s1><s2>89081 Ulm</s2><s3>DEU</s3><sZ>6 aut.</sZ></fA14><fA20><s1>14186-14189</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26801</s2><s5>354000505363340090</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>34 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0440144</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>PCCP. Physical chemistry chemical physics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We have fabricated hybrid devices in the form of indium tin oxide/titanium dioxide/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester/copper (ITO/TiO<sub>2</sub>/P3HT:PCBM/Cu) to clarify the impact of the TiO<sub>2</sub>/P3HT:PCBM interface on the charge transport using the charge extraction by linearly increasing voltage (CELIV) technique. We found that a large equilibrium charge reservoir is accumulated at negative offsets at the TiO<sub>2</sub>/ P3HT:PCBM interface leading to space charge limited extraction current (SCLC) transients. We show analytically the SCLC transient response and compare the experimental data to calculated SCLC at a linearly increasing voltage. The theoretical calculations indicate that the large charge reservoir at negative offset voltages is due to thermally generated charges combined with poor hole extraction at the ITO/TiO<sub>2</sub> contact, due to the hole blocking character of TiO<sub>2</sub>.</s0></fC01><fC02 i1="01" i2="X"><s0>001C01</s0></fC02><fC02 i1="02" i2="X"><s0>001C01I</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Réservoir</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Reservoir</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Depósito</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Phénomène transport</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Transport process</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Fenómeno transporte</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Oxyde de titane</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Titanium oxide</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Titanio óxido</s0><s5>03</s5></fC03><fC03 i1="04" 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